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SQS401EN
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TYPICAL CHARACTERISTICS (T A = 25 °C, unless otherwise noted)
Vishay Siliconix
1. 8
I D = 11 A
100
1.6
V GS = 10 V
10
T J = 150 °C
1.4
1.2
V GS = 4.5 V
1
T J = 25 °C
0.1
1.0
0. 8
0.6
0.01
0.001
- 50
- 25
0 25 50 75 100 125
150
175
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
0.25
0.20
0.15
0.10
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1.1
0. 8
0.5
0.2
V SD - Source-to-Drain V oltage ( V )
Source Drain Diode Forward Voltage
I D = 250 μA
I D = 5 mA
0.05
0.00
T J = 25 °C
T J = 150 °C
- 0.1
- 0.4
0
1
2 3 4 5 6 7
8
9
10
- 50
- 25
0
25 50 75 100 125
150
175
V GS - Gate-to-Source V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
- 40
I D = 1 mA
- 42
- 44
- 46
- 4 8
- 50
T J - Temperature (°C)
Threshold Voltage
- 50
- 25
0 25 50 75 100 125
150
175
T J - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2129 Rev. C, 31-Oct-11
4
Document Number: 65529
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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